دیتاشیت FCH190N65F-F085

FCH190N65F_F085

مشخصات دیتاشیت

نام دیتاشیت FCH190N65F_F085
حجم فایل 425.457 کیلوبایت
نوع فایل pdf
تعداد صفحات 10

دانلود دیتاشیت FCH190N65F_F085

FCH190N65F_F085 Datasheet

مشخصات

  • Manufacturer: ON Semiconductor
  • Series: Automotive, AEC-Q101, SuperFET® II
  • Packaging: Tube
  • Part Status: Not For New Designs
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 20.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 190mOhm @ 27A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 82nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3181pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 208W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
  • Base Part Number: FCH19
  • detail: N-Channel 650V 20.6A (Tc) 208W (Tc) Through Hole TO-247-3

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